DiodesZetex 2 Type P-Channel MOSFET, 20 V Enhancement, 6-Pin UDFN-2020 DMP2110UFDB-7
- N° de stock RS:
- 246-7526
- Référence fabricant:
- DMP2110UFDB-7
- Fabricant:
- DiodesZetex
Offre groupée disponible
Sous-total (1 paquet de 25 unités)*
5,90 €
(TVA exclue)
7,15 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 2 950 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 25 - 25 | 0,236 € | 5,90 € |
| 50 - 75 | 0,232 € | 5,80 € |
| 100 - 225 | 0,171 € | 4,28 € |
| 250 - 975 | 0,167 € | 4,18 € |
| 1000 + | 0,163 € | 4,08 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 246-7526
- Référence fabricant:
- DMP2110UFDB-7
- Fabricant:
- DiodesZetex
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | UDFN-2020 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.168Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.82W | |
| Typical Gate Charge Qg @ Vgs | 12.7nC | |
| Forward Voltage Vf | -1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type UDFN-2020 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.168Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.82W | ||
Typical Gate Charge Qg @ Vgs 12.7nC | ||
Forward Voltage Vf -1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The DiodesZetex makes a dual P-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in U-DFN2020-6 packaging and 0.6mm profile makes it ideal for low profile applications . It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application.
Maximum drain to source voltage is 20 V Maximum gate to source voltage is ±12 V It has PCB Footprint of 4mm^2 It offers low gate threshold voltage It provides an ESD protected Gate
Liens connexes
- Diodes Inc Dual P-Channel MOSFET 20 V, 6-Pin U-DFN2020 DMP2110UFDB-7
- Diodes Inc DMP2090UFDB P-Channel MOSFET 20 V, 6-Pin U-DFN2020 DMP2090UFDB-7
- Diodes Inc Dual P-Channel MOSFET 20 V, 6-Pin U-DFN2020 DMP2075UFDB-7
- Diodes Inc Dual N/P-Channel MOSFET 4.6 A 6-Pin U-DFN2020 DMC2053UFDB-7
- Diodes Inc Dual N-Channel MOSFET 100 V, 6-Pin U-DFN2020 DMN10H6D2LFDB-7
- Diodes Inc Dual P-Channel MOSFET 8-Pin DFN2020 DMP2065UFDB-7
- Diodes Inc Dual P-Channel MOSFET 6-Pin DFN2020 DMP2065UFDB-7
- Diodes Inc N/P-Channel MOSFET 30 V U-DFN2020-6 DMC3032LFDB-7