DiodesZetex DMP Type P-Channel MOSFET, 4.3 A, 20 V Enhancement, 3-Pin SOT-23 DMP2065UQ-7
- N° de stock RS:
- 246-7524
- Référence fabricant:
- DMP2065UQ-7
- Fabricant:
- DiodesZetex
Offre groupée disponible
Sous-total (1 paquet de 25 unités)*
6,925 €
(TVA exclue)
8,375 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 20 janvier 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 25 - 25 | 0,277 € | 6,93 € |
| 50 - 75 | 0,272 € | 6,80 € |
| 100 - 225 | 0,201 € | 5,03 € |
| 250 - 975 | 0,196 € | 4,90 € |
| 1000 + | 0,191 € | 4,78 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 246-7524
- Référence fabricant:
- DMP2065UQ-7
- Fabricant:
- DiodesZetex
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 4.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMP | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 6.8nC | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 1.2W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 4.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMP | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 6.8nC | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 1.2W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Length 3mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex makes a P-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in SOT23 packaging. It offers fast switching and high efficiency.
Maximum drain to source voltage is 20 V Maximum gate to source voltage is ±12 V It offers a small form factor and thermally efficient package enables higher density end products It offers a small form factor thermally efficient package enables higher density end products
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