DiodesZetex DMN Type N-Channel MOSFET, 1 A, 20 V Enhancement, 3-Pin X2-DFN DMN2451UFB4-7B
- N° de stock RS:
- 246-7512
- Référence fabricant:
- DMN2451UFB4-7B
- Fabricant:
- DiodesZetex
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 25 unités)*
4,95 €
(TVA exclue)
6,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 4 375 unité(s) expédiée(s) à partir du 31 août 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 25 - 475 | 0,198 € | 4,95 € |
| 500 - 975 | 0,069 € | 1,73 € |
| 1000 - 2475 | 0,047 € | 1,18 € |
| 2500 - 4975 | 0,038 € | 0,95 € |
| 5000 + | 0,036 € | 0,90 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 246-7512
- Référence fabricant:
- DMN2451UFB4-7B
- Fabricant:
- DiodesZetex
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMN | |
| Package Type | X2-DFN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 700mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.3nC | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 900mW | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.4mm | |
| Width | 0.65mm | |
| Length | 1.05mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMN | ||
Package Type X2-DFN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 700mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.3nC | ||
Maximum Gate Source Voltage Vgs 12V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 900mW | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 0.4mm | ||
Width 0.65mm | ||
Length 1.05mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in U-DFN1006-3 packaging and 0.6mm profile makes it ideal for low profile applications . It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application.
Maximum drain to source voltage is 20 V Maximum gate to source voltage is ±12 V It has PCB Footprint of 4mm^2 It offers low gate threshold voltage It provides an ESD protected Gate
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