DiodesZetex DMN Type N-Channel MOSFET, 0.9 A, 20 V Enhancement, 3-Pin X1-DFN DMN2310UFD-7
- N° de stock RS:
- 246-7511
- Référence fabricant:
- DMN2310UFD-7
- Fabricant:
- DiodesZetex
Offre groupée disponible
Sous-total (1 paquet de 25 unités)*
1,225 €
(TVA exclue)
1,475 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 2 875 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 25 - 25 | 0,049 € | 1,23 € |
| 50 - 75 | 0,048 € | 1,20 € |
| 100 - 225 | 0,04 € | 1,00 € |
| 250 - 975 | 0,038 € | 0,95 € |
| 1000 + | 0,038 € | 0,95 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 246-7511
- Référence fabricant:
- DMN2310UFD-7
- Fabricant:
- DiodesZetex
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 0.9A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | X1-DFN | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.6mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Typical Gate Charge Qg @ Vgs | 0.7nC | |
| Maximum Power Dissipation Pd | 890mW | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.25 mm | |
| Standards/Approvals | No | |
| Length | 1.25mm | |
| Height | 0.53mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 0.9A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type X1-DFN | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.6mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Typical Gate Charge Qg @ Vgs 0.7nC | ||
Maximum Power Dissipation Pd 890mW | ||
Maximum Operating Temperature 150°C | ||
Width 1.25 mm | ||
Standards/Approvals No | ||
Length 1.25mm | ||
Height 0.53mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex makes a dual N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in U-DFN1212-3 packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application.
Maximum drain to source voltage is 20 V and Maximum gate to source voltage is ±8 V It offers a ultra-small package size It has low input/output leakage
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