Infineon N-Channel MOSFET Transistor, 1.7 A, 500 V, 3-Pin SOT-223 IPN50R3K0CEATMA1
- N° de stock RS:
- 244-2265
- Référence fabricant:
- IPN50R3K0CEATMA1
- Fabricant:
- Infineon
Indisponible
RS n'aura plus ce produit en stock.
- N° de stock RS:
- 244-2265
- Référence fabricant:
- IPN50R3K0CEATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.7 A | |
| Maximum Drain Source Voltage | 500 V | |
| Package Type | SOT-223 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Number of Elements per Chip | 1 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.7 A | ||
Maximum Drain Source Voltage 500 V | ||
Package Type SOT-223 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
The Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the super junction principle (SJ) and conceived to fulfill consumer requirements.
Extremely low losses due to very low FOM Rdson Qg and Eoss.
Very high commutation ruggedness.
Easy to use/drive.
Pb-free plating,Halogen free mold compound.
Qualified for standard grade applications.
Very high commutation ruggedness.
Easy to use/drive.
Pb-free plating,Halogen free mold compound.
Qualified for standard grade applications.
