Infineon IRFH Type N-Channel MOSFET, 11 A, 40 V, 8-Pin PQFN IRL100HS121
- N° de stock RS:
- 243-9301
- Référence fabricant:
- IRL100HS121
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
4,55 €
(TVA exclue)
5,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 7 940 unité(s) expédiée(s) à partir du 07 janvier 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 0,91 € | 4,55 € |
| 50 - 120 | 0,81 € | 4,05 € |
| 125 - 245 | 0,754 € | 3,77 € |
| 250 - 495 | 0,71 € | 3,55 € |
| 500 + | 0,656 € | 3,28 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 243-9301
- Référence fabricant:
- IRL100HS121
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PQFN | |
| Series | IRFH | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PQFN | ||
Series IRFH | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon IRL100HS121 N-Channel Power MOSFET available in three different voltage classes (60V, 80V and 100V), Infineon’s new logic level power MOSFETs are highly suitable for wireless charging, telecom and adapter applications. The PQFN 2x2 package is especially suited for high speed switching and form factor critical applications. It enables higher power density and improved efficiency as well as significant space saving.
Lowest FOM (R DS(on) x Q g/gd)
Optimized Q g, C oss, and Q rr for fast switching
Logic level compatibility
Tiny PQFN 2x2mm package
Higher power density designs
Higher switching frequency
Uses OptiMOSTM5 Chip
Reduced parts count wherever 5V supplies are available
Driven directly from microcontrollers (slow switching)
System cost reductions
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