Infineon IPL N-Channel MOSFET, 4.5 A, 800 V, 5-Pin ThinPAK 5x6 IPLK80R900P7ATMA1
- N° de stock RS:
- 240-8558
- Référence fabricant:
- IPLK80R900P7ATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 5000 unités)*
2 680,00 €
(TVA exclue)
3 245,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 12 octobre 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 5000 + | 0,536 € | 2 680,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 240-8558
- Référence fabricant:
- IPLK80R900P7ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | ThinPAK 5x6 | |
| Series | IPL | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 43W | |
| Forward Voltage Vf | 900mV | |
| Maximum Gate Source Voltage Vgs | 3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 6.42mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type ThinPAK 5x6 | ||
Series IPL | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 43W | ||
Forward Voltage Vf 900mV | ||
Maximum Gate Source Voltage Vgs 3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 6.42mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon 800V CoolMOS™ P7 super junction MOSFET series is a perfect fit for low-power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, audio SMPS, AUX and industrial power. It offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK RDS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.
Best-in class FOM RDS(on)*Eoss; reduced Qg, Ciss, and Coss
Best-in-class DPAK RDS(on)
Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V
Integrated Zener Diode ESD protection
Fully optimized portfolio
Low EMI
The ThinPAK 5x6 package is characterized by a very small footprint of 5x6 mm² and a very low profile with a height of 1 mm and together with its benchmark low parasitic, these features lead to significantly smaller form factors and help to boost power density. This combination makes CoolMOS™ P7 in ThinPAK 5x6 a perfect fit for its target applications.
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