Infineon IPL Type N-Channel MOSFET, 21 A, 650 V Enhancement, 5-Pin ThinPAK 8x8
- N° de stock RS:
- 240-6619
- Référence fabricant:
- IPL65R130CFD7AUMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 3000 unités)*
6 309,00 €
(TVA exclue)
7 635,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 08 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 2,103 € | 6 309,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 240-6619
- Référence fabricant:
- IPL65R130CFD7AUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IPL | |
| Package Type | ThinPAK 8x8 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 95mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 171W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 8.1mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IPL | ||
Package Type ThinPAK 8x8 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 95mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 171W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Length 8.1mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon 650V CoolMOS™ CFD7 super junction MOSFET comes in a ThinPAK 8x8 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behaviour, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.
Significantly reduced switching losses compared to competition
Extra safety margin for designs with increased bus voltage
Improved full-load efficiency in industrial SMPS applications
High power density
Liens connexes
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