Nexperia Type N-Channel MOSFET, 10.3 A, 30 V, 4-Pin LFPAK56E PSMN2R0-55YLHX
- N° de stock RS:
- 240-1975
- Référence fabricant:
- PSMN2R0-55YLHX
- Fabricant:
- Nexperia
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
8,75 €
(TVA exclue)
10,588 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 1 758 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 48 | 4,375 € | 8,75 € |
| 50 - 98 | 3,935 € | 7,87 € |
| 100 - 248 | 3,22 € | 6,44 € |
| 250 - 498 | 3,16 € | 6,32 € |
| 500 + | 2,755 € | 5,51 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 240-1975
- Référence fabricant:
- PSMN2R0-55YLHX
- Fabricant:
- Nexperia
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | LFPAK56E | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 13.6mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 12.5W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type LFPAK56E | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 13.6mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 12.5W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Nexperia N-channel enhancement mode MOSFET is in LFPAK56E package. The ASFET is particularly suited to 36 V battery powered applications requiring strong avalanche capability, linear mode performance, use at high switching frequencies, and also safe a
Qualified to 175 °C
Avalanche rated, 100% tested
Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies
Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs
Unique “SchottkyPlus” technology for Schottky-like switching performance and low IDSS leakage
Narrow VGS(th) rating for easy paralleling and improved current sharing
Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions
Liens connexes
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