STMicroelectronics STH Type N-Channel MOSFET, 55 A, 30 V Enhancement, 7-Pin HU3PAK STHU32N65DM6AG
- N° de stock RS:
- 240-0609
- Référence fabricant:
- STHU32N65DM6AG
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
6,43 €
(TVA exclue)
7,78 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 30 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 6,43 € |
| 10 - 99 | 6,11 € |
| 100 - 249 | 5,72 € |
| 250 - 499 | 5,47 € |
| 500 + | 5,15 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 240-0609
- Référence fabricant:
- STHU32N65DM6AG
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | STH | |
| Package Type | HU3PAK | |
| Mount Type | Through Hole | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 320W | |
| Typical Gate Charge Qg @ Vgs | 52.6nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | UL | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series STH | ||
Package Type HU3PAK | ||
Mount Type Through Hole | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 320W | ||
Typical Gate Charge Qg @ Vgs 52.6nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals UL | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series, Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
AEC-Q101 qualified
Fast-recovery body diode
Lower RDS(on) x area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely dv/dt ruggedness
Zener-protected
Liens connexes
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