ROHM Type N-Channel MOSFET, 14 A, 1200 V Enhancement, 3-Pin TO-247N SCT2280KEGC11
- N° de stock RS:
- 235-2798
- Référence fabricant:
- SCT2280KEGC11
- Fabricant:
- ROHM
Sous-total (1 tube de 450 unités)*
4 073,40 €
(TVA exclue)
4 928,85 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | le tube* |
|---|---|---|
| 450 + | 9,052 € | 4 073,40 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 235-2798
- Référence fabricant:
- SCT2280KEGC11
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247N | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4V | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 108W | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247N | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4V | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 108W | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ROHM SCT series N-channel SiC power MOSFET suitable for solar inverters, DC/DC converters, induction heating and motor drives. It has low on state resistance and fast switching speed.
Fast reverse recovery
Easy to parallel
Simple to drive
Pb-free lead plating
RoHS compliant
Liens connexes
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