STMicroelectronics STH200 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin H2PAK-2 STH200N10WF7-2
- N° de stock RS:
- 234-8896
- Référence fabricant:
- STH200N10WF7-2
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
5,68 €
(TVA exclue)
6,87 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 880 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 5,68 € |
| 10 - 99 | 5,56 € |
| 100 - 249 | 5,45 € |
| 250 - 499 | 5,34 € |
| 500 + | 5,23 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 234-8896
- Référence fabricant:
- STH200N10WF7-2
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | H2PAK-2 | |
| Series | STH200 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 93nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 340W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type H2PAK-2 | ||
Series STH200 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 93nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 340W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics N-channel power MOSFET utilizes the STripFET F7 technology with an enhanced trench gate structure boosting linear mode withstanding capability and providing a wider SOA combined with a very low on-state resistance. The resulting MOSFET ensures the best trade-off between linear mode and switching operations.
Best-in-class SOA capability
High current surge capability
Extremely low on-resistance
Liens connexes
- STMicroelectronics STH200 N-Channel MOSFET 100 V, 3-Pin H2PAK-2 STH200N10WF7-2
- STMicroelectronics STripFET H7 N-Channel MOSFET 100 V, 3-Pin H2PAK-2 STH310N10F7-2
- STMicroelectronics STripFET H7 N-Channel MOSFET 80 V, 3-Pin H2PAK-2 STH270N8F7-2
- STMicroelectronics STripFET H7 N-Channel MOSFET 100 V, 7-Pin H2PAK-6 STH310N10F7-6
- STMicroelectronics DeepGate 110 A 3-Pin H2PAK-2 STH150N10F7-2
- STMicroelectronics MDmesh N-Channel MOSFET 1500 V, 3-Pin H2PAK-2 STH3N150-2
- STMicroelectronics SiC MOSFET SiC N-Channel MOSFET 1200 V, 3-Pin H2PAK-2 SCT20N120H
- STMicroelectronics STB37N60 SiC N-Channel MOSFET 1200 V, 3-Pin H2PAK-2 STH12N120K5-2