STMicroelectronics STH200 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin H2PAK-2 STH200N10WF7-2
- N° de stock RS:
- 234-8895
- Référence fabricant:
- STH200N10WF7-2
- Fabricant:
- STMicroelectronics
Sous-total (1 bobine de 1000 unités)*
3 750,00 €
(TVA exclue)
4 540,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 21 juillet 2026
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 1000 + | 3,75 € | 3 750,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 234-8895
- Référence fabricant:
- STH200N10WF7-2
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | H2PAK-2 | |
| Series | STH200 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 340W | |
| Typical Gate Charge Qg @ Vgs | 93nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type H2PAK-2 | ||
Series STH200 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 340W | ||
Typical Gate Charge Qg @ Vgs 93nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics N-channel power MOSFET utilizes the STripFET F7 technology with an enhanced trench gate structure boosting linear mode withstanding capability and providing a wider SOA combined with a very low on-state resistance. The resulting MOSFET ensures the best trade-off between linear mode and switching operations.
Best-in-class SOA capability
High current surge capability
Extremely low on-resistance
Liens connexes
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