onsemi NTH Type N-Channel MOSFET, 68 A, 1200 V N, 4-Pin TO-247
- N° de stock RS:
- 233-6853
- Référence fabricant:
- NTH4L022N120M3S
- Fabricant:
- onsemi
Sous-total (1 tube de 450 unités)*
4 460,40 €
(TVA exclue)
5 397,30 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 11 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 450 + | 9,912 € | 4 460,40 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 233-6853
- Référence fabricant:
- NTH4L022N120M3S
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 68A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | NTH | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 151nC | |
| Maximum Power Dissipation Pd | 325W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -0.45 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.8mm | |
| Standards/Approvals | RoHS | |
| Width | 5.2 mm | |
| Height | 41.36mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 68A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series NTH | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 151nC | ||
Maximum Power Dissipation Pd 325W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -0.45 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 15.8mm | ||
Standards/Approvals RoHS | ||
Width 5.2 mm | ||
Height 41.36mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L
The ON Semiconductor NTH4L022N120M3S is SiC power, single N-Channel MOSFET. It is available in a TO247-4L package. With Drain to Source voltage of 1200 V and continuous drain current of 68 A, the NTH4L022N120M3S is used in applications like Solar Inverters, Electric Vehicle Charging Stations, UPS (Uninterruptible Power Supplies), Energy Storage Systems, SMPS (Switch Mode Power Supplies).
The typical RDS(on) for this device is 22 mꭥ with VGS of 18 V
The device offers low switching losses
It is 100% avalanche tested
Liens connexes
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