STMicroelectronics SCTWA70N120G2V-4 Type N-Channel MOSFET, 91 A, 1200 V Enhancement, 4-Pin Hip-247 SCTWA70N120G2V-4
- N° de stock RS:
- 233-0475
- Référence fabricant:
- SCTWA70N120G2V-4
- Fabricant:
- STMicroelectronics
Sous-total (1 unité)*
36,67 €
(TVA exclue)
44,37 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité |
|---|---|
| 1 + | 36,67 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 233-0475
- Référence fabricant:
- SCTWA70N120G2V-4
- Fabricant:
- STMicroelectronics
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 91A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Hip-247 | |
| Series | SCTWA70N120G2V-4 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 547W | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Forward Voltage Vf | 2.7V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | No | |
| Height | 5mm | |
| Length | 34.8mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 91A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Hip-247 | ||
Series SCTWA70N120G2V-4 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 547W | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Forward Voltage Vf 2.7V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals No | ||
Height 5mm | ||
Length 34.8mm | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Very high operating junction temperature capability (TJ = 200 °C)
Source sensing pin for increased efficiency