STMicroelectronics SCTWA70N120G2V-4 Type N-Channel MOSFET, 91 A, 1200 V Enhancement, 4-Pin Hip-247
- N° de stock RS:
- 233-0474
- Référence fabricant:
- SCTWA70N120G2V-4
- Fabricant:
- STMicroelectronics
Sous-total (1 tube de 30 unités)*
1 125,72 €
(TVA exclue)
1 362,12 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 330 unité(s) expédiée(s) à partir du 11 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 30 + | 37,524 € | 1 125,72 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 233-0474
- Référence fabricant:
- SCTWA70N120G2V-4
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 91A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCTWA70N120G2V-4 | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 547W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2.7V | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Maximum Operating Temperature | 200°C | |
| Height | 5mm | |
| Standards/Approvals | No | |
| Length | 34.8mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 91A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCTWA70N120G2V-4 | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 547W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2.7V | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Maximum Operating Temperature 200°C | ||
Height 5mm | ||
Standards/Approvals No | ||
Length 34.8mm | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Very high operating junction temperature capability (TJ = 200 °C)
Source sensing pin for increased efficiency