STMicroelectronics SCTWA35N65G2V-4 N-Channel MOSFET, 45 A, 650 V Enhancement, 4-Pin Hip-247 SCTWA35N65G2V-4
- N° de stock RS:
- 233-0473P
- Référence fabricant:
- SCTWA35N65G2V-4
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total 10 unités (conditionné en tube)*
122,00 €
(TVA exclue)
147,60 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Dernier stock RS
- 236 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité |
|---|---|
| 10 - 99 | 12,20 € |
| 100 + | 12,06 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 233-0473P
- Référence fabricant:
- SCTWA35N65G2V-4
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | Hip-247 | |
| Series | SCTWA35N65G2V-4 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 67mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 3.3V | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Maximum Power Dissipation Pd | 240W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Maximum Operating Temperature | 200°C | |
| Length | 20.1mm | |
| Width | 21.1mm | |
| Height | 5.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type Hip-247 | ||
Series SCTWA35N65G2V-4 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 67mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 3.3V | ||
Maximum Gate Source Voltage Vgs 22V | ||
Maximum Power Dissipation Pd 240W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Maximum Operating Temperature 200°C | ||
Length 20.1mm | ||
Width 21.1mm | ||
Height 5.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Low capacitances
Source sensing pin for increased efficiency