STMicroelectronics Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCTH60N120G2-7
- N° de stock RS:
- 233-0471P
- Référence fabricant:
- SCTH60N120G2-7
- Fabricant:
- STMicroelectronics
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Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 233-0471P
- Référence fabricant:
- SCTH60N120G2-7
- Fabricant:
- STMicroelectronics
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | H2PAK-7 | |
| Mount Type | Surface Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.052Ω | |
| Channel Mode | Enhancement | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type H2PAK-7 | ||
Mount Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.052Ω | ||
Channel Mode Enhancement | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency