STMicroelectronics SCTW N-Channel MOSFET, 60 A, 1.2 kV Enhancement, 4-Pin Hip-247
- N° de stock RS:
- 230-0094P
- Référence fabricant:
- SCTWA60N120G2-4
- Fabricant:
- STMicroelectronics
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Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 230-0094P
- Référence fabricant:
- SCTWA60N120G2-4
- Fabricant:
- STMicroelectronics
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | Hip-247 | |
| Series | SCTW | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 388W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 3V | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.1mm | |
| Standards/Approvals | No | |
| Length | 15.9mm | |
| Height | 21.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type Hip-247 | ||
Series SCTW | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 388W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 3V | ||
Maximum Gate Source Voltage Vgs 22V | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Operating Temperature 175°C | ||
Width 5.1mm | ||
Standards/Approvals No | ||
Length 15.9mm | ||
Height 21.1mm | ||
Automotive Standard No | ||
The STMicroelectronics SCTWA60N is silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency