Infineon IPC Type N-Channel MOSFET, 50 A, 40 V Enhancement, 8-Pin SuperSO
- N° de stock RS:
- 229-1829
- Référence fabricant:
- IPC50N04S55R8ATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 5000 unités)*
1 090,00 €
(TVA exclue)
1 320,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 35 000 unité(s) expédiée(s) à partir du 01 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 5000 + | 0,218 € | 1 090,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 229-1829
- Référence fabricant:
- IPC50N04S55R8ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SuperSO | |
| Series | IPC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 42W | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.58 mm | |
| Length | 5.25mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SuperSO | ||
Series IPC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 42W | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Operating Temperature 175°C | ||
Width 5.58 mm | ||
Length 5.25mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Automotive Standard AEC-Q101 | ||
40V, N-Ch, 0.9 mΩ max, Automotive MOSFET, PQNF, OptiMOS™-6
Infineon introduces its latest OptiMOS™6 40V power MOS technology in the 5x6mm² SS08 leadless package with highest quality level and robustness for automotive applications. A portfolio of 16 products (RDSon_max from 0.8mΩ to 4.4mΩ address the whole applications range from low-power e.g. Body applications to high-power e.g. EPS) which enables the the customer to find the best product fit in the their applications.
All of this enables the Best-in-Class product FOM (RDSon x Qg) and performance on the market. The new SS08 product offers 120A continuous current ratings, which is >25% higher than the standard DPAK at almost half of its footprint area.
Additionally, the new generation of the SS08 package enables superior switching performance and EMI behavior due to very low package inductance (≈4x lower package inductivity vs traditional packages e.g. DPAK, D²PAK) by using the new copper-clip intercontact technology.
Summary of Features
•OptiMOS™ - power MOSFET for automotive applications
•N-channel - Enhancement mode - Normal Level
•AEC Q101 qualified
•MSL1 up to 260°C peak reflow
•175°C operating temperature
•Green Product (RoHS compliant)
•100% Avalanche tested
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