Infineon IPC N-Channel MOSFET, 50 A, 40 V Enhancement, 8-Pin SuperSO IPC50N04S55R8ATMA1

N° de stock RS:: 229-1829
Référence fabricant:: IPC50N04S55R8ATMA1
Fabricant:: Infineon

Infineon IPC N-Channel MOSFET, 50 A, 40 V Enhancement, 8-Pin SuperSO IPC50N04S55R8ATMA1

Sous-total (1 bobine de 5000 unités)*

1 465,00 €

(TVA exclue)

1 775,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 20 avril 2027

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Unité	Prix par unité	la bobine*
5000 +	0,293 €	1 465,00 €

*Prix donné à titre indicatif

N° de stock RS:: 229-1829
Référence fabricant:: IPC50N04S55R8ATMA1
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	50A
	Maximum Drain Source Voltage Vds	40V
	Package Type	SuperSO
	Series	IPC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	5.8mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	13nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	42W
	Forward Voltage Vf	1.1V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	175°C
	Width	5.58mm
	Standards/Approvals	No
	Length	5.25mm
	Height	1.1mm
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 50A
	Maximum Drain Source Voltage Vds 40V
	Package Type SuperSO
	Series IPC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 5.8mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 13nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 42W
	Forward Voltage Vf 1.1V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 175°C
	Width 5.58mm
	Standards/Approvals No
	Length 5.25mm
	Height 1.1mm
	Automotive Standard AEC-Q101

Datasheet - IPC50N04S55R8ATMA1

Infineon IPC Series MOSFET, 40V Maximum Drain Source Voltage, 50A Maximum Continuous Drain Current - IPC50N04S55R8ATMA1

This MOSFET is a surface-mount power transistor designed for switching and control duties in demanding electronic systems. It operates across an extended temperature range suitable for harsh environments and provides a low on-resistance N-channel enhancement device for efficient current delivery in Compact assemblies.

Features and Benefits:

• Low Rds(on) 5.8mΩ reduces conduction losses and improves efficiency
• 40V Vds enables moderate-voltage power switching capability
• 50A continuous drain current supports high-current applications
• 42W power dissipation allows sustained thermal load handling
• 13nC typical gate charge yields Faster switching with lower drive energy
• 20V maximum gate tolerance permits robust gate-drive margins

Applications

• Suitable for automotive power-distribution modules
• Ideal for DC-DC converter output stages
• Used with motor drivers requiring high continuous current
• Can be used for high-current load switching in control units
• Used for thermally stressed electronics operating at elevated temperatures

What temperature range can it reliably operate within?

It functions from −55°C up to 175°C to accommodate wide thermal environments.

What packaging and mounting format does it employ?

It is supplied in a Compact SuperSO package intended for surface mounting.

How many pins are available for PCB integration?

The device uses an 8‑pin configuration for connection and thermal paths.

What channel conduction type does it use and how does it operate?

It is an N‑channel device operating in enhancement mode requiring a positive gate drive.

Is this device suitable for automotive qualification requirements?

It complies with AEC‑Q101 automotive standardisation for component selection.