Infineon CoolMOS Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-220 IPP60R099C7XKSA1
- N° de stock RS:
- 222-4700
- Référence fabricant:
- IPP60R099C7XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
10,18 €
(TVA exclue)
12,32 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 262 unité(s) expédiée(s) à partir du 21 janvier 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 5,09 € | 10,18 € |
| 20 - 48 | 4,84 € | 9,68 € |
| 50 - 98 | 4,43 € | 8,86 € |
| 100 - 198 | 3,82 € | 7,64 € |
| 200 + | 3,525 € | 7,05 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 222-4700
- Référence fabricant:
- IPP60R099C7XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Power Dissipation Pd | 110W | |
| Standards/Approvals | No | |
| Width | 15.95 mm | |
| Height | 4.57mm | |
| Length | 10.36mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Power Dissipation Pd 110W | ||
Standards/Approvals No | ||
Width 15.95 mm | ||
Height 4.57mm | ||
Length 10.36mm | ||
Automotive Standard No | ||
The Infineon MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Pb-free lead plating; RoHS compliant
Superior thermal resistance 100% avalanche tested
Halogen-free according to IEC61249-2-23
Liens connexes
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 IPA60R180C7XKSA1