Infineon StrongIRFET N-Channel MOSFET & Diode, 40 A, 40 V Enhancement, 3-Pin ISOMETRIC IRF6613TRPBF
- N° de stock RS:
- 220-7474
- Référence fabricant:
- IRF6613TRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
14,28 €
(TVA exclue)
17,28 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 9 445 unité(s) expédiée(s) à partir du 12 octobre 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 20 | 2,856 € | 14,28 € |
| 25 - 45 | 2,572 € | 12,86 € |
| 50 - 120 | 2,40 € | 12,00 € |
| 125 - 245 | 2,232 € | 11,16 € |
| 250 + | 1,43 € | 7,15 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 220-7474
- Référence fabricant:
- IRF6613TRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | ISOMETRIC | |
| Series | StrongIRFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Power Dissipation Pd | 89W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Width | 5.05mm | |
| Standards/Approvals | No | |
| Length | 6.35mm | |
| Height | 680μm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type ISOMETRIC | ||
Series StrongIRFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Power Dissipation Pd 89W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Width 5.05mm | ||
Standards/Approvals No | ||
Length 6.35mm | ||
Height 680μm | ||
Automotive Standard No | ||
The Infineon Strong IRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
High-current rating
Dual-side cooling capability
Low package height of 0.7mm
Low parasitic (1-2 NH) inductance package
Wide availability from distribution partners
Industry standard qualification level
High current carrying capability
Optimum thermal performance
Compact form factor
High efficiency
Environmentally friendly
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