Infineon 700V CoolMOS P7 N-Channel MOSFET, 8.5 A, 700 V N, 3-Pin TO-220 IPA70R600P7SXKSA1
- N° de stock RS:
- 218-3013
- Référence fabricant:
- IPA70R600P7SXKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 20 unités)*
13,52 €
(TVA exclue)
16,36 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 80 | 0,676 € | 13,52 € |
| 100 - 180 | 0,643 € | 12,86 € |
| 200 - 480 | 0,629 € | 12,58 € |
| 500 - 980 | 0,588 € | 11,76 € |
| 1000 + | 0,549 € | 10,98 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 218-3013
- Référence fabricant:
- IPA70R600P7SXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 8.5A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | 700V CoolMOS P7 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 900mV | |
| Maximum Power Dissipation Pd | 24.9W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 8.5A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series 700V CoolMOS P7 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 900mV | ||
Maximum Power Dissipation Pd 24.9W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon 700V CoolMOS P7 Series MOSFET, 700V Drain Source Voltage, 8.5A Continuous Drain Current - IPA70R600P7SXKSA1
This MOSFET is a high-voltage N-channel transistor designed for power switching in through-hole assemblies. It operates across a wide ambient range and is suited to applications requiring substantial voltage blocking and controlled gate drive while mounted in a TO-220 package.
Features and Benefits:
• 700V drain-source rating enables high-voltage switching capability
• 8.5A continuous drain current supports moderate current loads
• 600mΩ Rds(on) reduces conduction losses in switching cycles
• 0.9V forward voltage limits diode drop during commutation
• 24.9W power dissipation permits substantial thermal throughput
• 30V maximum gate-source voltage allows standard gate‑drive voltages
• 8.5A continuous drain current supports moderate current loads
• 600mΩ Rds(on) reduces conduction losses in switching cycles
• 0.9V forward voltage limits diode drop during commutation
• 24.9W power dissipation permits substantial thermal throughput
• 30V maximum gate-source voltage allows standard gate‑drive voltages
Applications
• Used for switching in high-voltage power supplies
• Suitable for industrial high-voltage converters and inverters
• Ideal for through‑hole prototypes requiring robust heat‑sinking
• Can be used for medium‑current telecom power stages
• Used with discrete gate‑drive circuits in lab test rigs
• Suitable for industrial high-voltage converters and inverters
• Ideal for through‑hole prototypes requiring robust heat‑sinking
• Can be used for medium‑current telecom power stages
• Used with discrete gate‑drive circuits in lab test rigs
What operating temperatures can it withstand?
It functions across a thermal range from −40°C to +150°C.
How should it be mounted for optimal thermal performance?
The through‑hole TO-220 format is intended for bolt‑down heatsink mounting to maximise dissipation.
What gate‑drive constraints must be observed?
The gate‑source voltage must not exceed 30V to avoid gate damage.
What conduction and switching performance factors affect selection?
Conduction losses relate to the 600mΩ on‑resistance and switching behaviour is influenced by the 0.9V forward diode characteristic.
Is this device specified for automotive standard applications?
It is not designated to automotive standards and should be evaluated accordingly.
Liens connexes
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