Infineon N-Channel MOSFET, 3 A, 600 V Enhancement, 5-Pin ThinPAK 5x6
- N° de stock RS:
- 217-2540
- Référence fabricant:
- IPL60R1K5C6SATMA1
- Fabricant:
- Infineon
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Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 217-2540
- Référence fabricant:
- IPL60R1K5C6SATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | ThinPAK 5x6 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 900mV | |
| Maximum Power Dissipation Pd | 111W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 8.8mm | |
| Length | 8.8mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type ThinPAK 5x6 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 900mV | ||
Maximum Power Dissipation Pd 111W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 8.8mm | ||
Length 8.8mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
The Infineon new CoolMOS™ ThinPAK 5x6 is a leadless SMD package especially designed for high voltage MOSFETs. This new package has a very small footprint of 5x6mm 2 and a very low profile with only 1mm height. This significantly smaller package size in combination with its benchmark low parasitic inductances can be used as a new and effective way to decrease system solution size in power- density driven designs. The ThinPAK 5x6 package is characterized by a very low source inductance 1.6nH, as well as a similar thermal performance as DPAK. The package hence enables faster and thus more efficient switching of power MOSFETs and is easier to handle in terms of switching behaviour and EMI.
Small footprint (5x6mm²)
Low profile (1mm)
Low parasitic inductance
RoHS compliant
Halogen free mold compound
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