Infineon IPL Type N-Channel MOSFET, 27 A, 600 V Enhancement, 5-Pin ThinPAK IPL60R125P7AUMA1
- N° de stock RS:
- 217-2538
- Référence fabricant:
- IPL60R125P7AUMA1
- Fabricant:
- Infineon
Sous-total (1 paquet de 5 unités)*
11,38 €
(TVA exclue)
13,77 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 2 940 unité(s) expédiée(s) à partir du 08 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 + | 2,276 € | 11,38 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 217-2538
- Référence fabricant:
- IPL60R125P7AUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 27A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPL | |
| Package Type | ThinPAK | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Power Dissipation Pd | 111W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Length | 8.8mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 27A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPL | ||
Package Type ThinPAK | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Power Dissipation Pd 111W | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Length 8.8mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
Suitable for hard and soft switching(PFC and LLC)due to an outstanding commutation ruggedness
Significant reduction of switching and conduction losses
Excellent ESD robustness > 2kV (HBM) for all products
Better RDS(on)/package products compared to competition enabled by a
low RDS(on)*A(below1Ohm*mm²)
Fully qualified acc. JEDEC for Industrial Applications
Liens connexes
- Infineon IPL Type N-Channel MOSFET 600 V Enhancement, 5-Pin ThinPAK
- Infineon IPL Type N-Channel MOSFET 650 V Enhancement, 5-Pin ThinPAK 8x8
- Infineon IPL Type N-Channel MOSFET 650 V Enhancement, 5-Pin ThinPAK 8x8
- Infineon IPL Type N-Channel MOSFET 650 V Enhancement, 5-Pin ThinPAK 8x8
- Infineon IPL Type N-Channel MOSFET 700 V Enhancement, 5-Pin ThinPAK 8x8
- Infineon IPL Type N-Channel MOSFET 650 V Enhancement, 5-Pin ThinPAK 8x8 IPL65R115CFD7AUMA1
- Infineon IPL Type N-Channel MOSFET 650 V Enhancement, 5-Pin ThinPAK 8x8 IPL65R095CFD7AUMA1
- Infineon IPL Type N-Channel MOSFET 700 V Enhancement, 5-Pin ThinPAK 8x8 IPL65R200CFD7AUMA1