Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 75 A, 40 V Enhancement, 8-Pin PDFN56 TSM070NB04LCR

Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau en stock, il n'est plus vendu par le fabricant.
Options de conditionnement :
N° de stock RS:
216-9670
Référence fabricant:
TSM070NB04LCR
Fabricant:
Taiwan Semiconductor
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Taiwan Semiconductor

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

75A

Maximum Drain Source Voltage Vds

40V

Package Type

PDFN56

Series

TSM025

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

40nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

83W

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

6mm

Height

1.1mm

Width

4.21 mm

Standards/Approvals

IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC

Automotive Standard

No

The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested

Liens connexes