Infineon 800V CoolMOS P7 Type N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin TO-252 IPD80R900P7ATMA1

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16,58 €

(TVA exclue)

20,06 €

(TVA incluse)

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  • Plus 3 920 unité(s) expédiée(s) à partir du 05 janvier 2026
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le paquet*
20 +0,829 €16,58 €

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N° de stock RS:
215-2518
Référence fabricant:
IPD80R900P7ATMA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-252

Series

800V CoolMOS P7

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

900mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

15nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

45W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon 800V Cool MOS™ P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on fly back applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical fly back applications. It also enables higher power density designs through lower switching losses and better DPAK RDS(on) products.

Integrated Zener diode ESD protection up to Class 2 (HBM)

Best-in-class quality and reliability

Fully optimized portfolio

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