Infineon N Channel Mosfet OptiMOS 2 Type N-Channel MOSFET, 50 A, 25 V Enhancement, 8-Pin Power Block 5x6
- N° de stock RS:
- 215-2466
- Référence fabricant:
- BSG0811NDATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 5000 unités)*
3 960,00 €
(TVA exclue)
4 790,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 5 000 unité(s) expédiée(s) à partir du 16 mars 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 5000 + | 0,792 € | 3 960,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 215-2466
- Référence fabricant:
- BSG0811NDATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | Power Block 5x6 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 8.4nC | |
| Forward Voltage Vf | 0.84V | |
| Maximum Power Dissipation Pd | 6.25W | |
| Maximum Gate Source Voltage Vgs | 4.5 V | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | N Channel Mosfet | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC, RoHS, IEC61249-2-21 | |
| Length | 5.1mm | |
| Height | 1.1mm | |
| Width | 6.1 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type Power Block 5x6 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 8.4nC | ||
Forward Voltage Vf 0.84V | ||
Maximum Power Dissipation Pd 6.25W | ||
Maximum Gate Source Voltage Vgs 4.5 V | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration N Channel Mosfet | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC, RoHS, IEC61249-2-21 | ||
Length 5.1mm | ||
Height 1.1mm | ||
Width 6.1 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Infineon OptiMOS™ 5 Power Block is a leadless SMD package in a 5.0x6.0mm² package outline, including a low-side and a high-side MOSFET in a synchronous buck converter configuration. By replacing two separate discrete packages, such as SO8 or SuperSO8, with the OptiMOS™ 5 Power Block, customers can shrink their designs up to 85%. Standardizing power packages benefits the customer, as the number of different package outlines available in the market place is minimized.
50A max average load current
Source-down low side MOSFET for better PCB cooling
Internally connected low-side and high side (lowest loop inductance)
High side Kelvin connection for more efficient driving
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