Infineon CoolMOS C7 Type N-Channel MOSFET, 18 A, 650 V Enhancement, 3-Pin TO-247 IPW65R125C7XKSA1
- N° de stock RS:
- 214-9119
- Référence fabricant:
- IPW65R125C7XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
21,22 €
(TVA exclue)
25,675 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 240 unité(s) expédiée(s) à partir du 31 août 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 20 | 4,244 € | 21,22 € |
| 25 - 45 | 4,03 € | 20,15 € |
| 50 - 120 | 3,628 € | 18,14 € |
| 125 + | 3,608 € | 18,04 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-9119
- Référence fabricant:
- IPW65R125C7XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | CoolMOS C7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 101W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Length | 16.13mm | |
| Height | 21.1mm | |
| Width | 5.21mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series CoolMOS C7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 101W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Length 16.13mm | ||
Height 21.1mm | ||
Width 5.21mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Easy to use/drive
Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)
Liens connexes
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- Infineon CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 4-Pin TO-247
- Infineon CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
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