Infineon CoolMOS CFD7 Type N-Channel MOSFET, 16 A, 600 V Enhancement, 5-Pin VSON IPL60R160CFD7AUMA1
- N° de stock RS:
- 214-9072
- Référence fabricant:
- IPL60R160CFD7AUMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
11,37 €
(TVA exclue)
13,76 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 2 970 unité(s) expédiée(s) à partir du 30 décembre 2025
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 20 | 2,274 € | 11,37 € |
| 25 - 45 | 2,07 € | 10,35 € |
| 50 - 120 | 1,934 € | 9,67 € |
| 125 - 245 | 1,796 € | 8,98 € |
| 250 + | 1,682 € | 8,41 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-9072
- Référence fabricant:
- IPL60R160CFD7AUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolMOS CFD7 | |
| Package Type | VSON | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 95W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 8.1mm | |
| Height | 1.1mm | |
| Width | 8.1 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolMOS CFD7 | ||
Package Type VSON | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 95W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 8.1mm | ||
Height 1.1mm | ||
Width 8.1 mm | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as phase-shift full-bridge (ZVS) and LLC. The CoolMOS CFD7 technology meets highest efficiency and reliability standards and furthermore supports high power density solutions. Altogether, CoolMOS CFD7 makes resonant switching topologies more efficient, more reliable, lighter and cooler.
Ultra-fast body diode
Low gate charge
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