Infineon OptiMOS-T2 Type N-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-262
- N° de stock RS:
- 214-9067
- Référence fabricant:
- IPI80N06S4L07AKSA2
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 50 unités)*
34,70 €
(TVA exclue)
42,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 250 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 0,694 € | 34,70 € |
| 100 - 200 | 0,676 € | 33,80 € |
| 250 - 450 | 0,658 € | 32,90 € |
| 500 - 950 | 0,641 € | 32,05 € |
| 1000 + | 0,625 € | 31,25 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-9067
- Référence fabricant:
- IPI80N06S4L07AKSA2
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-262 | |
| Series | OptiMOS-T2 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 79W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 23.45mm | |
| Length | 10.2mm | |
| Standards/Approvals | No | |
| Width | 4.4 mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-262 | ||
Series OptiMOS-T2 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 79W | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 23.45mm | ||
Length 10.2mm | ||
Standards/Approvals No | ||
Width 4.4 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon range of new OptiMOS -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS -T2 product family extends the existing families of OptiMOS -T and OptiMOS. OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
The product is AEC Q101 qualified
It has 175°C operating temperature
100% Avalanche tested
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