Infineon 800V CoolMOS P7 Type N-Channel MOSFET, 11 A, 800 V N, 3-Pin TO-220
- N° de stock RS:
- 214-4356
- Référence fabricant:
- IPA80R450P7XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 50 unités)*
83,85 €
(TVA exclue)
101,45 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 600 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 1,677 € | 83,85 € |
| 100 - 200 | 1,341 € | 67,05 € |
| 250 - 450 | 1,274 € | 63,70 € |
| 500 - 950 | 1,207 € | 60,35 € |
| 1000 + | 1,157 € | 57,85 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-4356
- Référence fabricant:
- IPA80R450P7XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | 800V CoolMOS P7 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 29W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.68mm | |
| Width | 16.15 mm | |
| Standards/Approvals | No | |
| Height | 4.85mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series 800V CoolMOS P7 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 29W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 10.68mm | ||
Width 16.15 mm | ||
Standards/Approvals No | ||
Height 4.85mm | ||
Automotive Standard No | ||
The Infineon 800V Cool MOS P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on fly back applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power.
It has fully optimised portfolio
It has lower assembly cost
Liens connexes
- Infineon 800V CoolMOS P7 Type N-Channel MOSFET 800 V N, 3-Pin TO-220 IPA80R450P7XKSA1
- Infineon 800V CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- Infineon 800V CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 IPAN80R450P7XKSA1
- Infineon 800V CoolMOS P7 Type N-Channel MOSFET 800 V, 3-Pin TO-220
- Infineon 800V CoolMOS P7 Type N-Channel MOSFET 800 V, 3-Pin TO-220 IPP80R1K2P7XKSA1
- Infineon 800V CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- Infineon 800V CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- Infineon 800V CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 IPP80R280P7XKSA1