STMicroelectronics SCTWA40N120G2V-4 Type N-Channel MOSFET, 45 A, 1200 V, 3-Pin Hip-247 SCTWA40N120G2V-4
- N° de stock RS:
- 212-2094
- Référence fabricant:
- SCTWA40N120G2V-4
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
16,08 €
(TVA exclue)
19,46 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 14 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité |
|---|---|
| 1 - 4 | 16,08 € |
| 5 - 9 | 15,74 € |
| 10 + | 14,77 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 212-2094
- Référence fabricant:
- SCTWA40N120G2V-4
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Hip-247 | |
| Series | SCTWA40N120G2V-4 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 3.3V | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 277W | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Maximum Operating Temperature | 200°C | |
| Width | 21.1 mm | |
| Height | 5.1mm | |
| Standards/Approvals | No | |
| Length | 15.9mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Hip-247 | ||
Series SCTWA40N120G2V-4 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 3.3V | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 277W | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Maximum Operating Temperature 200°C | ||
Width 21.1 mm | ||
Height 5.1mm | ||
Standards/Approvals No | ||
Length 15.9mm | ||
Automotive Standard No | ||
SiC MOSFET
The STMicroelectronics 650 V, 55 mΩ SCTH35N65G2V-7 STPOWER SiC MOSFET with a trench field-stop (TFS) IGBT of the same voltage rating and equivalent on-state resistance. The STPOWER SiC MOSFET exhibits significantly reduced switching losses, even at high temperatures. This enables designer to operate at very high switching frequencies, reducing the size of passive components for smaller form factors.
Very low switching losses
Low power losses at high temperatures
Higher operating temperature (up to 200 ˚C)
Body diode with no recovery losses
Easy to drive
Liens connexes
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