STMicroelectronics SCTWA40N120G2V-4 Type N-Channel MOSFET, 45 A, 1200 V, 3-Pin Hip-247

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N° de stock RS:
212-2093
Référence fabricant:
SCTWA40N120G2V-4
Fabricant:
STMicroelectronics
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Marque

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

1200V

Series

SCTWA40N120G2V-4

Package Type

Hip-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

70mΩ

Forward Voltage Vf

3.3V

Typical Gate Charge Qg @ Vgs

61nC

Maximum Power Dissipation Pd

277W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

200°C

Height

5.1mm

Standards/Approvals

No

Length

15.9mm

Automotive Standard

No

SiC MOSFET


The STMicroelectronics 650 V, 55 mΩ SCTH35N65G2V-7 STPOWER SiC MOSFET with a trench field-stop (TFS) IGBT of the same voltage rating and equivalent on-state resistance. The STPOWER SiC MOSFET exhibits significantly reduced switching losses, even at high temperatures. This enables designer to operate at very high switching frequencies, reducing the size of passive components for smaller form factors.

Very low switching losses

Low power losses at high temperatures

Higher operating temperature (up to 200 ˚C)

Body diode with no recovery losses

Easy to drive

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