STMicroelectronics SCTWA40N120G2V-4 Type N-Channel MOSFET, 45 A, 1200 V, 3-Pin Hip-247

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N° de stock RS:
212-2093
Référence fabricant:
SCTWA40N120G2V-4
Fabricant:
STMicroelectronics
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Marque

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

1200V

Series

SCTWA40N120G2V-4

Package Type

Hip-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

70mΩ

Forward Voltage Vf

3.3V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

61nC

Maximum Gate Source Voltage Vgs

22 V

Maximum Power Dissipation Pd

277W

Maximum Operating Temperature

200°C

Length

15.9mm

Standards/Approvals

No

Width

21.1 mm

Height

5.1mm

Automotive Standard

No

SiC MOSFET


The STMicroelectronics 650 V, 55 mΩ SCTH35N65G2V-7 STPOWER SiC MOSFET with a trench field-stop (TFS) IGBT of the same voltage rating and equivalent on-state resistance. The STPOWER SiC MOSFET exhibits significantly reduced switching losses, even at high temperatures. This enables designer to operate at very high switching frequencies, reducing the size of passive components for smaller form factors.

Very low switching losses

Low power losses at high temperatures

Higher operating temperature (up to 200 ˚C)

Body diode with no recovery losses

Easy to drive

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