STMicroelectronics SCTWA40N120G2V-4 Type N-Channel MOSFET, 45 A, 1200 V, 3-Pin Hip-247

Voir l’ensemble des MOSFETs
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
N° de stock RS:
212-2093
Référence fabricant:
SCTWA40N120G2V-4
Fabricant:
STMicroelectronics
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

1200V

Package Type

Hip-247

Series

SCTWA40N120G2V-4

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

70mΩ

Typical Gate Charge Qg @ Vgs

61nC

Forward Voltage Vf

3.3V

Maximum Power Dissipation Pd

277W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

200°C

Length

15.9mm

Standards/Approvals

No

Height

5.1mm

Width

21.1 mm

Automotive Standard

No

SiC MOSFET


The STMicroelectronics 650 V, 55 mΩ SCTH35N65G2V-7 STPOWER SiC MOSFET with a trench field-stop (TFS) IGBT of the same voltage rating and equivalent on-state resistance. The STPOWER SiC MOSFET exhibits significantly reduced switching losses, even at high temperatures. This enables designer to operate at very high switching frequencies, reducing the size of passive components for smaller form factors.

Very low switching losses

Low power losses at high temperatures

Higher operating temperature (up to 200 ˚C)

Body diode with no recovery losses

Easy to drive

Liens connexes