STMicroelectronics SCTWA40N120G2V-4 Type N-Channel MOSFET, 45 A, 1200 V, 3-Pin Hip-247
- N° de stock RS:
- 212-2093
- Référence fabricant:
- SCTWA40N120G2V-4
- Fabricant:
- STMicroelectronics
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 212-2093
- Référence fabricant:
- SCTWA40N120G2V-4
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCTWA40N120G2V-4 | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 277W | |
| Forward Voltage Vf | 3.3V | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Maximum Operating Temperature | 200°C | |
| Height | 5.1mm | |
| Standards/Approvals | No | |
| Length | 15.9mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCTWA40N120G2V-4 | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 277W | ||
Forward Voltage Vf 3.3V | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Maximum Operating Temperature 200°C | ||
Height 5.1mm | ||
Standards/Approvals No | ||
Length 15.9mm | ||
Automotive Standard No | ||
SiC MOSFET
The STMicroelectronics 650 V, 55 mΩ SCTH35N65G2V-7 STPOWER SiC MOSFET with a trench field-stop (TFS) IGBT of the same voltage rating and equivalent on-state resistance. The STPOWER SiC MOSFET exhibits significantly reduced switching losses, even at high temperatures. This enables designer to operate at very high switching frequencies, reducing the size of passive components for smaller form factors.
Very low switching losses
Low power losses at high temperatures
Higher operating temperature (up to 200 ˚C)
Body diode with no recovery losses
Easy to drive