STMicroelectronics SCT1000N170 Type N-Channel MOSFET, 7 A, 1700 V Enhancement, 3-Pin Hip-247 SCT1000N170
- N° de stock RS:
- 212-2092
- Référence fabricant:
- SCT1000N170
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
10,20 €
(TVA exclue)
12,34 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 07 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 4 | 10,20 € |
| 5 - 9 | 9,94 € |
| 10 + | 9,70 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 212-2092
- Référence fabricant:
- SCT1000N170
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 1700V | |
| Series | SCT1000N170 | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.66Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 13.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Forward Voltage Vf | 4.5V | |
| Maximum Power Dissipation Pd | 96W | |
| Maximum Operating Temperature | 200°C | |
| Height | 5.15mm | |
| Width | 20.15 mm | |
| Length | 15.75mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 1700V | ||
Series SCT1000N170 | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.66Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 13.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Forward Voltage Vf 4.5V | ||
Maximum Power Dissipation Pd 96W | ||
Maximum Operating Temperature 200°C | ||
Height 5.15mm | ||
Width 20.15 mm | ||
Length 15.75mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
SiC MOSFET
The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability.
High speed switching performance
Very fast and robust intrinsic body diode
Low capacitances
Liens connexes
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- STMicroelectronics SCTW90 SiC N-Channel MOSFET 650 V, 3-Pin HiP247 SCTW90N65G2V
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