STMicroelectronics M6 N-Channel MOSFET, 11 A, 600 V, 5-Pin PowerFlat HV
- N° de stock RS:
- 203-3439P
- Référence fabricant:
- STL19N60M6
- Fabricant:
- STMicroelectronics
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 203-3439P
- Référence fabricant:
- STL19N60M6
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PowerFlat HV | |
| Series | M6 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 308mΩ | |
| Typical Gate Charge Qg @ Vgs | 16.8nC | |
| Maximum Power Dissipation Pd | 90W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Operating Temperature | 175°C | |
| Width | 0.95mm | |
| Standards/Approvals | No | |
| Height | 8.1mm | |
| Length | 8.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PowerFlat HV | ||
Series M6 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 308mΩ | ||
Typical Gate Charge Qg @ Vgs 16.8nC | ||
Maximum Power Dissipation Pd 90W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Operating Temperature 175°C | ||
Width 0.95mm | ||
Standards/Approvals No | ||
Height 8.1mm | ||
Length 8.1mm | ||
Automotive Standard No | ||
The STMicroelectronics N-channel MDmesh M6 Power MOSFET incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. Previous generation of MDmesh devices through its new M6 technology, is built by STMicroelectronics. This combines excellent RDS(on) per area improvement with one of the most effective switching behaviours available, as well as a user-friendly experience for maximum end-application efficiency.
Reduced switching losses
Low gate input resistance
100% avalanche tested
Zener-protected