STMicroelectronics M6 Type N-Channel MOSFET, 13 A, 600 V, 3-Pin TO-252 STD18N60M6
- N° de stock RS:
- 203-3433
- Référence fabricant:
- STD18N60M6
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
7,38 €
(TVA exclue)
8,93 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 03 juillet 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 1,476 € | 7,38 € |
| 50 - 95 | 1,43 € | 7,15 € |
| 100 - 245 | 1,392 € | 6,96 € |
| 250 - 995 | 1,354 € | 6,77 € |
| 1000 + | 1,322 € | 6,61 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 203-3433
- Référence fabricant:
- STD18N60M6
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | M6 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 230mΩ | |
| Maximum Power Dissipation Pd | 110W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 16.8nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 2.4 mm | |
| Length | 6.6mm | |
| Height | 10.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series M6 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 230mΩ | ||
Maximum Power Dissipation Pd 110W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 16.8nC | ||
Maximum Operating Temperature 175°C | ||
Width 2.4 mm | ||
Length 6.6mm | ||
Height 10.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The STMicroelectronics N-channel MDmesh M6 Power MOSFET incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. Previous generation of MDmesh devices through its new M6 technology, is built by STMicroelectronics. This combines excellent RDS(on) per area improvement with one of the most effective switching behaviours available, as well as a user-friendly experience for maximum end-application efficiency.
Reduced switching losses
Low gate input resistance
100% avalanche tested
Zener-protected
Liens connexes
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