STMicroelectronics SCT Type N-Channel MOSFET, 20 A, 1200 V Depletion, 3-Pin Hip-247 SCTWA20N120
- N° de stock RS:
- 202-5492
- Référence fabricant:
- SCTWA20N120
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
11,83 €
(TVA exclue)
14,31 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 6 unité(s) expédiée(s) à partir du 06 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 4 | 11,83 € |
| 5 - 9 | 11,33 € |
| 10 + | 11,04 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 202-5492
- Référence fabricant:
- SCTWA20N120
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Hip-247 | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.189Ω | |
| Channel Mode | Depletion | |
| Forward Voltage Vf | 3.6V | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 175W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 200°C | |
| Length | 16.02mm | |
| Width | 5.15 mm | |
| Height | 41.37mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Hip-247 | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.189Ω | ||
Channel Mode Depletion | ||
Forward Voltage Vf 3.6V | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 175W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 200°C | ||
Length 16.02mm | ||
Width 5.15 mm | ||
Height 41.37mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
Very fast and robust intrinsic body diode
Low capacitance
Liens connexes
- STMicroelectronics SCT SiC N-Channel MOSFET Module 1200 V Depletion, 3-Pin HiP247 SCTWA20N120
- STMicroelectronics SCT SiC N-Channel MOSFET Module 1200 V Depletion, 3-Pin HiP247 SCTW40N120G2VAG
- STMicroelectronics SCT SiC N-Channel MOSFET Module 1200 V Depletion, 3-Pin HiP247 SCT50N120
- STMicroelectronics SCT SiC N-Channel MOSFET Module 1200 V Depletion, 3-Pin HiP247 SCT10N120
- STMicroelectronics SCT SiC N-Channel MOSFET Module 1200 V Depletion, 7-Pin HIP247 3pins SCTW100N65G2AG
- STMicroelectronics SCT SiC N-Channel SiC Power Module 1200 V Depletion, 3-Pin HiP247 SCT20N120AG
- STMicroelectronics SCT SiC N-Channel SiC Power Module 1200 V Depletion, 3-Pin HiP247 SCT10N120AG
- STMicroelectronics SCT SiC N-Channel MOSFET Module 650 V Depletion, 3-Pin HiP247 SCTW35N65G2VAG