STMicroelectronics SCTH90 N-Channel MOSFET, 116 A, 650 V Enhancement, 7-Pin H2PAK
- N° de stock RS:
- 201-0869P
- Référence fabricant:
- SCTH90N65G2V-7
- Fabricant:
- STMicroelectronics
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Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 201-0869P
- Référence fabricant:
- SCTH90N65G2V-7
- Fabricant:
- STMicroelectronics
Spécifications
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Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 116A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | H2PAK | |
| Series | SCTH90 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 484W | |
| Typical Gate Charge Qg @ Vgs | 157nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 10.4mm | |
| Standards/Approvals | No | |
| Width | 4.8mm | |
| Length | 15.25mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 116A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type H2PAK | ||
Series SCTH90 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 22V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 484W | ||
Typical Gate Charge Qg @ Vgs 157nC | ||
Maximum Operating Temperature 175°C | ||
Height 10.4mm | ||
Standards/Approvals No | ||
Width 4.8mm | ||
Length 15.25mm | ||
Automotive Standard No | ||
The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 116A and drain to source resistance 18m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very high operating junction temperature capability (TJ = 175 °C)
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitances