onsemi NTMFS Type N-Channel MOSFET, 235 A, 60 V Enhancement, 8-Pin PQFN NTMFSC1D6N06CL
- N° de stock RS:
- 195-8747
- Référence fabricant:
- NTMFSC1D6N06CL
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 paquet de 10 unités)*
15,24 €
(TVA exclue)
18,44 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 150 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 1,524 € | 15,24 € |
| 100 - 240 | 1,314 € | 13,14 € |
| 250 + | 1,139 € | 11,39 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 195-8747
- Référence fabricant:
- NTMFSC1D6N06CL
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 235A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PQFN | |
| Series | NTMFS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 91nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 166W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.95mm | |
| Standards/Approvals | No | |
| Width | 5 mm | |
| Length | 6mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 235A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PQFN | ||
Series NTMFS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 91nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 166W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 0.95mm | ||
Standards/Approvals No | ||
Width 5 mm | ||
Length 6mm | ||
Automotive Standard No | ||
This N-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
Top and bottom sided exposed in standard 5x6mm pin-out
Improved thermal dissipation through top and bottom side of the package
Ultra low RDS-on
Reduced conduction loss
Reduced capacitances and package inductance
Reduced switching loss
Applications
Synchronous Rectifier in AC-DC and DC-DC power supplies
Motor Switch
Load switch
Liens connexes
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