STMicroelectronics MDmesh M5 Type N-Channel MOSFET, 53 A, 300 V Enhancement, 3-Pin TO-263 STB45N30M5
- N° de stock RS:
- 192-4977
- Référence fabricant:
- STB45N30M5
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
13,63 €
(TVA exclue)
16,492 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 14 octobre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 8 | 6,815 € | 13,63 € |
| 10 - 18 | 6,41 € | 12,82 € |
| 20 - 48 | 6,055 € | 12,11 € |
| 50 - 98 | 5,735 € | 11,47 € |
| 100 + | 5,45 € | 10,90 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 192-4977
- Référence fabricant:
- STB45N30M5
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 53A | |
| Maximum Drain Source Voltage Vds | 300V | |
| Series | MDmesh M5 | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.04Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 95nC | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 250W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Height | 4.37mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 53A | ||
Maximum Drain Source Voltage Vds 300V | ||
Series MDmesh M5 | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.04Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 95nC | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 250W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Height 4.37mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.
Extremely low RDS(on)
Low gate charge and input capacitance
Excellent switching performance
Liens connexes
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