STMicroelectronics Type N-Channel MOSFET, 5.5 A, 600 V Enhancement, 8-Pin PowerFLAT STL10N60M6
- N° de stock RS:
- 192-4825
- Référence fabricant:
- STL10N60M6
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
10,38 €
(TVA exclue)
12,56 €
(TVA incluse)
Ajouter 40 unités pour bénéficier d'une livraison gratuite
Temporairement en rupture de stock
- Expédition à partir du 18 juin 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 20 | 2,076 € | 10,38 € |
| 25 - 45 | 1,948 € | 9,74 € |
| 50 - 120 | 1,85 € | 9,25 € |
| 125 - 245 | 1,748 € | 8,74 € |
| 250 + | 1,658 € | 8,29 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 192-4825
- Référence fabricant:
- STL10N60M6
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.5A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PowerFLAT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 660mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 8.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 48W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5 mm | |
| Height | 0.95mm | |
| Length | 6mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.5A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PowerFLAT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 660mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 8.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 48W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Width 5 mm | ||
Height 0.95mm | ||
Length 6mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.
Reduced switching losses
Lower RDS(on) per area vs previous generation
Low gate input resistance
Zener-protected
Liens connexes
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