STMicroelectronics Type N-Channel MOSFET, 15 A, 600 V Enhancement, 5-Pin PowerFLAT
- N° de stock RS:
- 192-4658
- Référence fabricant:
- STL26N60DM6
- Fabricant:
- STMicroelectronics
Sous-total (1 bobine de 3000 unités)*
6 051,00 €
(TVA exclue)
7 323,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 17 juin 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 2,017 € | 6 051,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 192-4658
- Référence fabricant:
- STL26N60DM6
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PowerFLAT | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 215mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 110W | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Length | 8.1mm | |
| Height | 0.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PowerFLAT | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 215mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 110W | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Length 8.1mm | ||
Height 0.9mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
Extremely high dv/dt ruggedness
Zener-protected
Liens connexes
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 5-Pin PowerFLAT STL26N60DM6
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 5-Pin PowerFLAT
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 8-Pin PowerFLAT
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 8-Pin PowerFLAT STL10N60M6
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 5-Pin PowerFLAT STL45N60DM6
- STMicroelectronics MDmesh M5 Type N-Channel MOSFET 600 V Enhancement, 5-Pin PowerFLAT
- STMicroelectronics ST8L60 Type N-Channel Single MOSFETs 600 V Enhancement, 5-Pin PowerFLAT ST8L60N065DM9
- STMicroelectronics MDmesh M5 Type N-Channel MOSFET 600 V Enhancement, 5-Pin PowerFLAT STL36N55M5