Wolfspeed C3M Type N-Channel MOSFET, 30 A, 1200 V Enhancement, 7-Pin TO-263 C3M0075120J
- N° de stock RS:
- 192-3373
- Référence fabricant:
- C3M0075120J
- Fabricant:
- Wolfspeed
Sous-total (1 tube de 50 unités)*
732,45 €
(TVA exclue)
886,25 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 50 unité(s) expédiée(s) à partir du 31 août 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 + | 14,649 € | 732,45 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 192-3373
- Référence fabricant:
- C3M0075120J
- Fabricant:
- Wolfspeed
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Wolfspeed | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | C3M | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 75mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 4.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 113.6W | |
| Maximum Gate Source Voltage Vgs | 19V | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.57mm | |
| Standards/Approvals | No | |
| Length | 10.23mm | |
| Width | 9.12mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Wolfspeed | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series C3M | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 75mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 4.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 113.6W | ||
Maximum Gate Source Voltage Vgs 19V | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Maximum Operating Temperature 150°C | ||
Height 4.57mm | ||
Standards/Approvals No | ||
Length 10.23mm | ||
Width 9.12mm | ||
Automotive Standard No | ||
Wolfspeed extends its leadership in SiC technology by introducing advanced SiC MOSFET technology in new low inductance discrete packing. The newly released packages allow engineers to take full advantage of the high-frequency capability of the latest C3MTM planar MOSFET chips. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC converters and chargers.
Minimum of 1200V Vbr across entire operating temperature range
New low-impedance package with driver source
> 7mm of creepage/clearance between drain and source
High-speed switching with low output capacitance
High blocking voltage with low RDS(on)
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
Liens connexes
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