STMicroelectronics STB11NM80 Type N-Channel MDmesh Power MOSFET, 11 A, 800 V Enhancement, 3-Pin TO-263
- N° de stock RS:
- 188-8461P
- Référence fabricant:
- STB11NM80T4
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total 10 unités (conditionné en bande continue)*
68,70 €
(TVA exclue)
83,10 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 23 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 10 - 18 | 6,87 € |
| 20 - 48 | 6,185 € |
| 50 - 98 | 5,57 € |
| 100 + | 5,29 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 188-8461P
- Référence fabricant:
- STB11NM80T4
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MDmesh Power MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-263 | |
| Series | STB11NM80 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.4Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 43.6nC | |
| Forward Voltage Vf | 0.86V | |
| Maximum Power Dissipation Pd | 150W | |
| Minimum Operating Temperature | -65°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Height | 4.37mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MDmesh Power MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-263 | ||
Series STB11NM80 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.4Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 43.6nC | ||
Forward Voltage Vf 0.86V | ||
Maximum Power Dissipation Pd 150W | ||
Minimum Operating Temperature -65°C | ||
Maximum Operating Temperature 150°C | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Height 4.37mm | ||
Automotive Standard No | ||
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
Low input capacitance and gate charge
Low gate input resistance
Best RDS(on)Qg in the industry
Applications
Switching applications