STMicroelectronics STB11NM80 Type N-Channel MDmesh Power MOSFET, 11 A, 800 V Enhancement, 3-Pin TO-263 STB11NM80T4
- N° de stock RS:
- 188-8461
- Référence fabricant:
- STB11NM80T4
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
13,87 €
(TVA exclue)
16,782 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 08 mai 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 8 | 6,935 € | 13,87 € |
| 10 - 18 | 6,59 € | 13,18 € |
| 20 - 48 | 5,93 € | 11,86 € |
| 50 - 98 | 5,34 € | 10,68 € |
| 100 + | 5,07 € | 10,14 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 188-8461
- Référence fabricant:
- STB11NM80T4
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MDmesh Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | STB11NM80 | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.4Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Forward Voltage Vf | 0.86V | |
| Typical Gate Charge Qg @ Vgs | 43.6nC | |
| Minimum Operating Temperature | -65°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 9.35 mm | |
| Length | 10.4mm | |
| Height | 4.37mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MDmesh Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series STB11NM80 | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.4Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Forward Voltage Vf 0.86V | ||
Typical Gate Charge Qg @ Vgs 43.6nC | ||
Minimum Operating Temperature -65°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 9.35 mm | ||
Length 10.4mm | ||
Height 4.37mm | ||
Automotive Standard No | ||
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
Low input capacitance and gate charge
Low gate input resistance
Best RDS(on)Qg in the industry
Applications
Switching applications
Liens connexes
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