STMicroelectronics N-Channel MOSFET, 9 A, 950 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 188-8295
- Référence fabricant:
- STP6N95K5
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
66,00 €
(TVA exclue)
80,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 800 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 200 | 1,32 € | 66,00 € |
| 250 - 450 | 1,287 € | 64,35 € |
| 500 + | 1,251 € | 62,55 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 188-8295
- Référence fabricant:
- STP6N95K5
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.25Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 90W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.4mm | |
| Width | 4.6mm | |
| Standards/Approvals | No | |
| Height | 15.75mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 950V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.25Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 90W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Length 10.4mm | ||
Width 4.6mm | ||
Standards/Approvals No | ||
Height 15.75mm | ||
Automotive Standard No | ||
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications Product status link requiring superior power density and high efficiency.
Ultra low gate charge
Zener-protected
Applications
Switching applications
Liens connexes
- STMicroelectronics Type N-Channel MOSFET 950 V Enhancement, 3-Pin TO-220 STP6N95K5
- STMicroelectronics MDmesh 17.5 A 3-Pin TO-220
- STMicroelectronics MDmesh 17.5 A 3-Pin TO-220 STP20N95K5
- STMicroelectronics MDmesh K5 Type N-Channel MOSFET 950 V Enhancement, 3-Pin TO-220FP
- STMicroelectronics MDmesh K5 12 A 3-Pin TO-220
- STMicroelectronics MDmesh K5 8 A 3-Pin TO-220
- STMicroelectronics MDmesh K5 12 A 3-Pin TO-220 STP15N95K5
- STMicroelectronics MDmesh K5 8 A 3-Pin TO-220 STP10N95K5