STMicroelectronics Type N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin TO-252
- N° de stock RS:
- 188-8289
- Référence fabricant:
- STD5N80K5
- Fabricant:
- STMicroelectronics
Sous-total (1 bobine de 2500 unités)*
1 932,50 €
(TVA exclue)
2 337,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 2 500 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2500 + | 0,773 € | 1 932,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 188-8289
- Référence fabricant:
- STD5N80K5
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.73Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 60W | |
| Typical Gate Charge Qg @ Vgs | 5nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.17mm | |
| Standards/Approvals | No | |
| Length | 6.6mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.73Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 60W | ||
Typical Gate Charge Qg @ Vgs 5nC | ||
Maximum Operating Temperature 150°C | ||
Height 2.17mm | ||
Standards/Approvals No | ||
Length 6.6mm | ||
Automotive Standard No | ||
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Industry’s lowest RDS(on) x area
Industry’s best FoM (figure of merit)
Ultra-low gate charge
Zener-protected
Applications
Switching applications
Liens connexes
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252 STD5N80K5
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252 STD80N340K6
- STMicroelectronics SuperMESH Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252 STD1NK80ZT4
- STMicroelectronics SuperMESH Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252 STD4NK80ZT4
- STMicroelectronics Type N-Channel MOSFET 710 V Enhancement, 3-Pin TO-252
- STMicroelectronics Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252
- STMicroelectronics Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252