STMicroelectronics Type N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-252
- N° de stock RS:
- 188-8287
- Référence fabricant:
- STD13N60DM2
- Fabricant:
- STMicroelectronics
Sous-total (1 bobine de 2500 unités)*
2 257,50 €
(TVA exclue)
2 732,50 €
(TVA incluse)
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- Expédition à partir du 14 juillet 2026
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 2500 + | 0,903 € | 2 257,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 188-8287
- Référence fabricant:
- STD13N60DM2
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 12.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 110W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.17mm | |
| Standards/Approvals | No | |
| Width | 6.2 mm | |
| Length | 6.6mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 12.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 110W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Height 2.17mm | ||
Standards/Approvals No | ||
Width 6.2 mm | ||
Length 6.6mm | ||
Automotive Standard No | ||
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Liens connexes
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- STMicroelectronics MDmesh II Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 STD13NM60N
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252