STMicroelectronics STP12NM50 Type N-Channel MOSFET, 12 A, 500 V Enhancement, 3-Pin TO-263
- N° de stock RS:
- 188-8281
- Référence fabricant:
- STB12NM50T4
- Fabricant:
- STMicroelectronics
Sous-total (1 bobine de 1000 unités)*
1 896,00 €
(TVA exclue)
2 294,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 20 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 1000 + | 1,896 € | 1 896,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 188-8281
- Référence fabricant:
- STB12NM50T4
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | STP12NM50 | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 350mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 160W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Minimum Operating Temperature | -65°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.4mm | |
| Width | 9.35 mm | |
| Standards/Approvals | No | |
| Height | 4.37mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series STP12NM50 | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 350mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 160W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Minimum Operating Temperature -65°C | ||
Maximum Operating Temperature 150°C | ||
Length 10.4mm | ||
Width 9.35 mm | ||
Standards/Approvals No | ||
Height 4.37mm | ||
Automotive Standard No | ||
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance.
High dv/dt and avalanche capabilities
Low input capacitance and gate charge
Tight process control and high manufacturing yields
Low gate input resistance
Applications
Switching application
Liens connexes
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- STMicroelectronics MDmesh Type N-Channel MDmesh II Power MOSFET 500 V Enhancement, 3-Pin TO-263
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